Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Optically active three-dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B

We report the first realization on nonplanar patterned substrates of optically active three-dimensionally cotied semiconductor volumes created in situ via a one-step molecular beam epitaxial growth. Growth is carried out on pyramidal mesas on ( 111 )B substrates and in a regime that results in the emergence of three equivalent { 110) side facets which overtake the as-patterned {loo) side facets...

Characteristic of P-type AlAs/GaAs Bragg Mirrors Grown by MBE on (100) and (311)A Oriented Substrates

P-type GaAs/AlAs distributed Bragg mirrors have been grown using molecular beam epitaxy on (100) and (311)A GaAs substrates in a similar conditions. A comparison of I-V measurements shows that the resistance of the ungraded mirrors grown on the (311)A substrate is 35 times lower than those grown on the (100) substrate with similar structure. The effective barrier heights for both (311 )A and (1...

Pseudomorphic growth and strain relaxation of α-Zn3P2 on GaAs(001) by molecular beam epitaxy

Tetragonal zinc phosphide (a-Zn3P2) was grown pseudomorphically, by compound-source molecularbeam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn3P2(004):GaAs(002) and Zn3P2(202):GaAs(111). Partial relaxation of the Zn3P2 lattice was observed for films that were 4150 nm in thickness. Van der Pauw and Hall effect measurements indicated that carrier mo...

Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B

We report systematic growth optimization of high Al-content AlGaAs, AlAs, and associated modulation-doped quantum well (QW) heterostructures on on-axis and misoriented GaAs (111)B by molecular beam epitaxy. Growth temperatures TG> 690 C and low As4 fluxes close to group III-rich growth significantly suppress twin defects in high-Al content AlGaAs on on-axis GaAs (111)B, as quantified by atomic ...